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IPN60R1K0CEATMA1
Discrete Semiconductor Products

IPN60R1K0CEATMA1

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INFINEON

MOSFET N-CH 600V 6.8A SOT223

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IPN60R1K0CEATMA1
Discrete Semiconductor Products

IPN60R1K0CEATMA1

Active
INFINEON

MOSFET N-CH 600V 6.8A SOT223

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIPN60R1K0CEATMA1
Current - Continuous Drain (Id) @ 25°C6.8 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]13 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]280 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-40 °C
Package / CaseTO-261AA, TO-261-4
Power Dissipation (Max)5 W
Rds On (Max) @ Id, Vgs [Max]1 Ohm
Supplier Device PackagePG-SOT223-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.02
10$ 0.64
100$ 0.42
500$ 0.32
1000$ 0.29
Digi-Reel® 1$ 1.02
10$ 0.64
100$ 0.42
500$ 0.32
1000$ 0.29
N/A 13788$ 0.52
Tape & Reel (TR) 3000$ 0.25
6000$ 0.23
9000$ 0.22
15000$ 0.21

Description

General part information

IPN60R1 Series

N-Channel 600 V 6.8A (Tc) 5W (Tc) Surface Mount PG-SOT223-3

Documents

Technical documentation and resources