Discrete Semiconductor Products

IRFS7734TRLPBF

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STRONGIRFET™ N-CHANNEL POWER MOSFET ; D2PAK TO-263 PACKAGE; 3.5 MOHM;

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Discrete Semiconductor Products

Active

STRONGIRFET™ N-CHANNEL POWER MOSFET ; D2PAK TO-263 PACKAGE; 3.5 MOHM;

Technical Specifications

Parameters and characteristics for this part

Specification	IRFS7734TRLPBF

Current - Continuous Drain (Id) @ 25°C	183 A
Drain to Source Voltage (Vdss)	75 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 6 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	270 nC
Input Capacitance (Ciss) (Max) @ Vds	10150 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	290 W
Rds On (Max) @ Id, Vgs	3.5 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.7 V

Part	Operating Temperature [Max]	Operating Temperature [Min]	Technology	Vgs(th) (Max) @ Id	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	FET Type	Mounting Type	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds
INFINEON IRFS7734TRL7PP	175 °C	-55 °C	MOSFET (Metal Oxide)	3.7 V	20 V	270 nC	D2PAK (6 Leads + Tab) TO-263-7	197 A	6 V 10 V	75 V	N-Channel	Surface Mount	294 W	10130 pF	3.05 mOhm	PG-TO263-7
INFINEON IRFS7734TRLPBF	175 °C	-55 °C	MOSFET (Metal Oxide)	3.7 V	20 V	270 nC	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	183 A	6 V 10 V	75 V	N-Channel	Surface Mount	290 W		3.5 mOhm		10150 pF

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