Discrete Semiconductor Products

IRFR2405TRLPBF

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MOSFET N-CH 55V 56A DPAK

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Discrete Semiconductor Products

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MOSFET N-CH 55V 56A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	IRFR2405TRLPBF

Current - Continuous Drain (Id) @ 25°C	56 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	110 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2430 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)	110 W
Rds On (Max) @ Id, Vgs	16 mOhm
Supplier Device Package	TO-252AA (DPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Mounting Type	Power Dissipation (Max)	FET Type	Vgs (Max)	Technology	Drive Voltage (Max Rds On, Min Rds On)
INFINEON IRFR2405TRPBF	TO-252AA (DPAK)	56 A	175 °C	-55 °C	55 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	110 nC	4 V	2430 pF	16 mOhm	Surface Mount	110 W	N-Channel	20 V	MOSFET (Metal Oxide)	10 V
INFINEON IRFR2405TRR	TO-252AA (DPAK)	56 A	175 °C	-55 °C	55 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	110 nC	4 V	2430 pF	16 mOhm	Surface Mount	110 W	N-Channel	20 V	MOSFET (Metal Oxide)	10 V
INFINEON IRFR2405TRLPBF	TO-252AA (DPAK)	56 A	175 °C	-55 °C	55 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	110 nC	4 V	2430 pF	16 mOhm	Surface Mount	110 W	N-Channel	20 V	MOSFET (Metal Oxide)	10 V

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