Discrete Semiconductor Products

SDUR3060W

Active

DIODE GEN PURP 600V 30A TO247AC

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

DIODE GEN PURP 600V 30A TO247AC

Technical Specifications

Parameters and characteristics for this part

Specification	SDUR3060W

Current - Average Rectified (Io)	30 A
Current - Reverse Leakage @ Vr	250 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-247-2
Reverse Recovery Time (trr)	50 ns
Speed	500 ns, 200 mA
Supplier Device Package	TO-247AC
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.8 V

Part	Speed	Reverse Recovery Time (trr)	Package / Case	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Diode Configuration	Technology	Voltage - Forward (Vf) (Max) @ If [Max]	Current - Average Rectified (Io)
SMC Diode Solutions SDUR3060WT	200 mA 500 ns	50 ns	TO-247-3	100 µA	-55 °C	150 °C	Through Hole	600 V	TO-247AD	1 Pair Common Cathode	Standard	2.03 V
SMC Diode Solutions SDUR3060CT	200 mA 500 ns	50 ns	TO-220-3	100 µA	-55 °C	150 °C	Through Hole	600 V	TO-220AB	1 Pair Common Cathode	Standard	2.03 V
SMC Diode Solutions SDUR3060W	200 mA 500 ns	50 ns	TO-247-2	250 µA	-55 °C	150 °C	Through Hole	600 V	TO-247AC		Standard	1.8 V	30 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 600 V 30A Through Hole TO-247AC

Technical documentation and resources