Discrete Semiconductor Products

SI9424BDY-T1-GE3

Obsolete

MOSFET P-CH 20V 5.6A 8SO

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 20V 5.6A 8SO

Technical Specifications

Parameters and characteristics for this part

Specification	SI9424BDY-T1-GE3

Current - Continuous Drain (Id) (Ta)	5.6 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	2.5 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	P-Channel
Gate Charge (Max)	40 nC
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Power Dissipation (Max)	1.25 W
Rds On (Max)	25 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	9 V
Vgs(th) (Max)	850 mV

Part	Drain to Source Voltage (Vdss)	Vgs (Max)	Technology	Rds On (Max)	Gate Charge (Max)	FET Type	Power Dissipation (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Package Name	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Package Length	Package Width	Mounting Type	Current - Continuous Drain (Id) (Ta)	Vgs(th) (Max)
Vishay Dale SI9424BDY-T1-GE3	20 V	9 V	MOSFET (Metal Oxide)	25 mOhm	40 nC	P-Channel	1.25 W	-55 °C	150 °C	8-SOIC	2.5 V	4.5 V	0.154 in	3.9 mm	Surface Mount	5.6 A	850 mV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

P-Channel 20 V 5.6A (Ta) 1.25W (Ta) Surface Mount 8-SOIC

Technical documentation and resources