Discrete Semiconductor Products

2N5401 APP PBFREE

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BIPOLAR TRANSISTORS - BJT PNP 160VCBO 150VCEO 5.0VEBO 600MA 625MW

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Discrete Semiconductor Products

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BIPOLAR TRANSISTORS - BJT PNP 160VCBO 150VCEO 5.0VEBO 600MA 625MW

Technical Specifications

Parameters and characteristics for this part

Specification	2N5401 APP PBFREE

Current - Collector (Ic) (Max) [Max]	600 mA
Current - Collector Cutoff (Max) [Max]	50 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	60
Frequency - Transition	300 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Power - Max [Max]	625 mW
Supplier Device Package	TO-92
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	150 V

Part	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Current - Collector Cutoff (Max) [Max]	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Transistor Type
Central Semiconductor Corp 2N5401 APP PBFREE	300 MHz	60	Through Hole	50 nA	TO-226-3 TO-92-3 (TO-226AA) Formed Leads	150 °C	-65 °C	500 mV	TO-92	150 V	625 mW	600 mA	PNP

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General part information

BIPOLAR TRANSISTORS - BJT PNP 160VCBO 150VCEO 5.0VEBO 600MA 625MW

Technical documentation and resources