Discrete Semiconductor Products

SSM6L807R,LF

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HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, N-CH + P-CH MOSFET, 30 V/-20 V, 4 A/-4 A, 0.0391 Ω@4.5V/0.045 Ω@10V, TSOP6F

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Discrete Semiconductor Products

Active

HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, N-CH + P-CH MOSFET, 30 V/-20 V, 4 A/-4 A, 0.0391 Ω@4.5V/0.045 Ω@10V, TSOP6F

Technical Specifications

Parameters and characteristics for this part

Specification	SSM6L807R,LF

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Qg) (Max) @ Vgs	3.2 nC, 6.74 nC
Input Capacitance (Ciss) (Max) @ Vds	310 pF, 480 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-SMD, Flat Leads
Power - Max [Max]	1.4 W
Rds On (Max) @ Id, Vgs	39.1 mOhm
Supplier Device Package	6-TSOP-F
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch + P-ch MOSFET, 30 V/-20 V, 4 A/-4 A, 0.0391 Ω@4.5V/0.045 Ω@10V, TSOP6F

Part	Configuration	Technology	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Supplier Device Package	Power - Max [Max]	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Operating Temperature	Drain to Source Voltage (Vdss)
Toshiba Semiconductor and Storage SSM6L807R,LF	N and P-Channel	MOSFET (Metal Oxide)	310 pF 480 pF	Surface Mount	6-TSOP-F	1.4 W	39.1 mOhm	3.2 nC 6.74 nC	6-SMD Flat Leads	4 A	1 V	150 °C	30 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.79

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch + P-ch MOSFET, 30 V/-20 V, 4 A/-4 A, 0.0391 Ω@4.5V/0.045 Ω@10V, TSOP6F

Technical documentation and resources