Discrete Semiconductor Products

UF3001-HF

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DIODE GEN PURP 50V 3A DO27

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Discrete Semiconductor Products

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DIODE GEN PURP 50V 3A DO27

Technical Specifications

Parameters and characteristics for this part

Specification	UF3001-HF

Capacitance @ Vr, F	50 pF
Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	125 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-27, DO-201AA, Axial
Reverse Recovery Time (trr)	50 ns
Speed	500 ns, 200 mA
Supplier Device Package	DO-27
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	50 V
Voltage - Forward (Vf) (Max) @ If [Max]	1 V

Part	Package / Case	Mounting Type	Current - Average Rectified (Io)	Supplier Device Package	Current - Reverse Leakage @ Vr	Reverse Recovery Time (trr)	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If [Max]	Technology	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Capacitance @ Vr, F
Comchip Technology UF3001-G	Axial DO-201AA DO-27	Through Hole	3 A	DO-27	5 µA	50 ns	200 mA 500 ns	50 V	1 V	Standard	-55 °C	125 °C	50 pF
Comchip Technology UF3001-HF	Axial DO-201AA DO-27	Through Hole	3 A	DO-27	5 µA	50 ns	200 mA 500 ns	50 V	1 V	Standard	-55 °C	125 °C	50 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 50 V 3A Through Hole DO-27

Technical documentation and resources

No documents available