Discrete Semiconductor Products

SIB488DK-T1-GE3

Obsolete

MOSFET N-CH 12V 9A PPAK SC75-6

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 12V 9A PPAK SC75-6

Technical Specifications

Parameters and characteristics for this part

Specification	SIB488DK-T1-GE3

Current - Continuous Drain (Id) (Tc)	9 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On)	1.8 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	N-Channel
Gate Charge (Max)	20 nC
Input Capacitance (Ciss) (Max)	725 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SC-75-6
Package Name	PowerPAK® SC-75-6
Power Dissipation (Max)	2.4 W, 13 W
Rds On (Max)	20 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max)	1 V

Part	Gate Charge (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Mounting Type	Power Dissipation (Max)	Rds On (Max)	Package / Case	FET Type	Current - Continuous Drain (Id) (Tc)	Drain to Source Voltage (Vdss)	Vgs (Max)	Package Name	Technology	Vgs(th) (Max)	Input Capacitance (Ciss) (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)
Vishay Dale SIB488DK-T1-GE3	20 nC	-55 °C	150 °C	Surface Mount	2.4 W 13 W	20 mOhm	PowerPAK® SC-75-6	N-Channel	9 A	12 V	8 V	PowerPAK® SC-75-6	MOSFET (Metal Oxide)	1 V	725 pF	4.5 V	1.8 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

N-Channel 12 V 9A (Tc) 2.4W (Ta), 13W (Tc) Surface Mount PowerPAK® SC-75-6

Technical documentation and resources