Discrete Semiconductor Products

BUK9Y19-55B,115

Active

MOSFET N-CH 55V 46A LFPAK56

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFET N-CH 55V 46A LFPAK56

Technical Specifications

Parameters and characteristics for this part

Specification	BUK9Y19-55B,115

Current - Continuous Drain (Id) @ 25°C	46 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	18 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1992 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-669, SC-100
Power Dissipation (Max) [Max]	85 W
Qualification	AEC-Q101
Supplier Device Package	Power-SO8, LFPAK56
Technology	MOSFET (Metal Oxide)
Vgs (Max)	15 V
Vgs(th) (Max) @ Id	2 V

Part	Vgs (Max)	Technology	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Qualification	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Supplier Device Package	Grade
Freescale Semiconductor - NXP BUK9Y19-55B,115	15 V	MOSFET (Metal Oxide)	85 W	46 A	1992 pF	55 V	-55 °C	175 ░C	2 V	Surface Mount	18 nC	SC-100 SOT-669	AEC-Q101	5 V	N-Channel	LFPAK56 Power-SO8	Automotive

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 55 V 46A (Tc) 85W (Tc) Surface Mount LFPAK56, Power-SO8

Technical documentation and resources