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EM63B165TS-5ISG
Integrated Circuits (ICs)

EM63B165TS-5ISG

Active
Etron Technology, Inc.

IC DRAM 512MBIT PAR 54TSOP II

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EM63B165TS-5ISG
Integrated Circuits (ICs)

EM63B165TS-5ISG

Active
Etron Technology, Inc.

IC DRAM 512MBIT PAR 54TSOP II

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationEM63B165TS-5ISG
Access Time4.5 ns
Clock Frequency200 MHz
Memory Depth32 M
Memory FormatDRAM
Memory Interface (Type)Parallel
Memory Size512 Mb
Memory TypeVolatile
Memory Width16 bit
Mounting TypeSurface Mount
Operating Temperature (Max)85 °C
Operating Temperature (Min)-40 °C
Package Length10.16 mm
Package Name54-TSOP, 54-TSOP II
Package Width10.16 mm
TechnologySDRAM
Voltage - Supply (Maximum)3.6 V
Voltage - Supply (Minimum)3 V
Write Cycle Time - Page10 ns
Write Cycle Time - Word10 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyN/A 0$ 7.101m+
Tape & Reel (TR) 1000$ 6.481m+

CAD

3D models and CAD resources for this part

Description

General part information

EM63B165 Series

SDRAM Memory IC 512Mbit Parallel 200 MHz 4.5 ns 54-TSOP II

Documents

Technical documentation and resources