Discrete Semiconductor Products

SIDC105D120H8X1SA1

Unknown

1200 V, 200 A, HIGH EFFICIENCY, EMITTER CONTROLLED DIODE

Search across all available documentation for this part.

Discrete Semiconductor Products

Unknown

1200 V, 200 A, HIGH EFFICIENCY, EMITTER CONTROLLED DIODE

Technical Specifications

Parameters and characteristics for this part

Specification	SIDC105D120H8X1SA1

Current - Average Rectified (Io)	200 A
Current - Reverse Leakage @ Vr	27 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	Die
Speed [Min]	200 mA, 500 ns
Supplier Device Package	Sawn on foil
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	45 A
Voltage - Forward (Vf) (Max) @ If [Max]	1.41 V

Part	Technology	Current - Average Rectified (Io)	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Package / Case	Voltage - Forward (Vf) (Max) @ If [Max]	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Mounting Type	Speed [Min]
INFINEON SIDC105D120H8X1SA1	Standard	200 A	-40 °C	175 ░C	1.2 kV	27 µA	Die	1.41 V	45 A	Sawn on foil	Surface Mount	200 mA 500 ns

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General part information

Highly efficient fast switching emitter controlled diode for power modules and discrete devices.

Technical documentation and resources