Discrete Semiconductor Products

PSMN8R2-80YS,115

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PSMN8R2-80YS - N-CHANNEL LFPAK 80 V 8.5 MΩ STANDARD LEVEL MOSFET@EN-US SOIC 4-PIN

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Discrete Semiconductor Products

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PSMN8R2-80YS - N-CHANNEL LFPAK 80 V 8.5 MΩ STANDARD LEVEL MOSFET@EN-US SOIC 4-PIN

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN8R2-80YS,115

Current - Continuous Drain (Id) @ 25°C	82 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	55 nC
Input Capacitance (Ciss) (Max) @ Vds	3640 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-669, SC-100
Power Dissipation (Max)	130 W
Rds On (Max) @ Id, Vgs	8.5 mOhm
Supplier Device Package	Power-SO8, LFPAK56
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Drain to Source Voltage (Vdss)	Technology	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Package / Case
Freescale Semiconductor - NXP PSMN8R2-80YS,115	3640 pF	N-Channel	-55 °C	175 ░C	8.5 mOhm	LFPAK56 Power-SO8	55 nC	10 V	20 V	80 V	MOSFET (Metal Oxide)	130 W	82 A	Surface Mount	SC-100 SOT-669

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 80 V 82A (Tc) 130W (Tc) Surface Mount LFPAK56, Power-SO8

Technical documentation and resources