Discrete Semiconductor Products
RUC002N05T116
ActiveRohm Semiconductor
POWER MOSFET, N CHANNEL, 50 V, 200 MA, 1.6 OHM, SOT-23, SURFACE MOUNT
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Discrete Semiconductor Products
RUC002N05T116
ActiveRohm Semiconductor
POWER MOSFET, N CHANNEL, 50 V, 200 MA, 1.6 OHM, SOT-23, SURFACE MOUNT
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | RUC002N05T116 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 200 mA |
| Drain to Source Voltage (Vdss) | 50 V |
| Drive Voltage (Max Rds On, Min Rds On) [Max] | 1.2 V |
| Drive Voltage (Max Rds On, Min Rds On) [Min] | 4.5 V |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 25 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | SOT-23-3, TO-236-3, SC-59 |
| Power Dissipation (Max) | 200 mW |
| Supplier Device Package | SST3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) [Max] | 8 V |
| Vgs(th) (Max) @ Id | 1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
RUC002N05 Series
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobile equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.
Documents
Technical documentation and resources