Discrete Semiconductor Products

EMD3-TP

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TRANS PREBIAS 1NPN 1PNP SOT-563

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Discrete Semiconductor Products

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TRANS PREBIAS 1NPN 1PNP SOT-563

Technical Specifications

Parameters and characteristics for this part

Specification	EMD3-TP

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	30
Frequency - Transition	250 MHz
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Power - Max [Max]	200 mW
Resistor - Emitter Base (R2)	10 kOhms
Supplier Device Package	SOT-563
Transistor Type	1 NPN - Pre-Biased, 1 PNP
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Frequency - Transition	Voltage - Collector Emitter Breakdown (Max) [Max]	Transistor Type	Supplier Device Package	Package / Case	Resistor - Emitter Base (R2)	Mounting Type	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max) [Max]
MCC (Micro Commercial Components) EMD3-TP	200 mW	30	100 mA	250 MHz	50 V	1 NPN - Pre-Biased 1 PNP	SOT-563	SOT-563 SOT-666	10 kOhms	Surface Mount	300 mV	500 nA

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General part information

Pre-Biased Bipolar Transistor (BJT) 1 NPN - Pre-Biased, 1 PNP 50V 100mA 250MHz 200mW Surface Mount SOT-563

Technical documentation and resources