Discrete Semiconductor Products

SKP06N60XKSA1

Obsolete

IGBT 600V 12A 68W TO220-3

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Discrete Semiconductor Products

Obsolete

IGBT 600V 12A 68W TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	SKP06N60XKSA1

Current - Collector (Ic) (Max) [Max]	12 A
Gate Charge	32 nC
IGBT Type	NPT
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power - Max [Max]	68 W
Reverse Recovery Time (trr)	200 ns
Supplier Device Package	PG-TO220-3-1
Switching Energy	215 µJ
Td (on/off) @ 25°C [custom]	25 ns
Td (on/off) @ 25°C [custom]	220 ns
Test Condition	6 A, 50 Ohm, 15 V, 400 V
Vce(on) (Max) @ Vge, Ic	2.4 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Part	Reverse Recovery Time (trr)	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce(on) (Max) @ Vge, Ic	Package / Case	Test Condition	Operating Temperature [Max]	Operating Temperature [Min]	Current - Collector (Ic) (Max) [Max]	Gate Charge	Td (on/off) @ 25°C [custom]	Td (on/off) @ 25°C [custom]	Switching Energy	Power - Max [Max]	Supplier Device Package	Mounting Type	IGBT Type
INFINEON SKP06N60XKSA1	200 ns	600 V	2.4 V	TO-220-3	6 A 15 V 50 Ohm 400 V	150 °C	-55 °C	12 A	32 nC	25 ns	220 ns	215 µJ	68 W	PG-TO220-3-1	Through Hole	NPT

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

IGBT NPT 600 V 12 A 68 W Through Hole PG-TO220-3-1

Technical documentation and resources