Discrete Semiconductor Products

MMDT2227A_R1_00001

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BIPOLAR TRANSISTORS - BJT COMPLEMENTARYNPN PNPSMALLSIGNALSURFACEMOUNTTRANSISTOR VCE-60 40V IC-600 600MA

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Discrete Semiconductor Products

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BIPOLAR TRANSISTORS - BJT COMPLEMENTARYNPN PNPSMALLSIGNALSURFACEMOUNTTRANSISTOR VCE-60 40V IC-600 600MA

Technical Specifications

Parameters and characteristics for this part

Specification	MMDT2227A_R1_00001

Current - Collector (Ic) (Max) [Max]	600 mA
Current - Collector Cutoff (Max)	10 nA, 50 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100 hFE
Frequency - Transition	200 MHz, 300 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-363, SC-88, 6-TSSOP
Power - Max	200 mW, 225 mW
Supplier Device Package	SOT-363
Transistor Type	1 NPN, 1 PNP Complementary
Vce Saturation (Max) @ Ib, Ic	1 V, 1.6 V
Voltage - Collector Emitter Breakdown (Max) [Max]	60 V
Voltage - Collector Emitter Breakdown (Max) [Min]	40 V

Part	Mounting Type	Transistor Type	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	Power - Max	Current - Collector Cutoff (Max)	Voltage - Collector Emitter Breakdown (Max) [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]
Panjit International Inc. MMDT2227A_R1_00001	Surface Mount	1 NPN 1 PNP Complementary	200 MHz 300 MHz	100 hFE	6-TSSOP SC-88 SOT-363	SOT-363	1 V 1.6 V	600 mA	200 mW 225 mW	10 nA 50 nA	40 V	60 V	150 °C	-55 °C

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General part information

BIPOLAR TRANSISTORS - BJT COMPLEMENTARYNPN PNPSMALLSIGNALSURFACEMOUNTTRANSISTOR VCE-60 40V IC-600 600MA

Technical documentation and resources