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BST39,115
Discrete Semiconductor Products

BST39,115

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Nexperia USA Inc.

NPN HIGH-VOLTAGE TRANSISTORS

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BST39,115
Discrete Semiconductor Products

BST39,115

Active
Nexperia USA Inc.

NPN HIGH-VOLTAGE TRANSISTORS

Technical Specifications

Parameters and characteristics for this part

SpecificationBST39,115
Current - Collector (Ic) (Max) [Max]100 mA
Current - Collector Cutoff (Max) [Max]20 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]40
Frequency - Transition70 MHz
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseTO-243AA
Power - Max [Max]1.3 W
QualificationAEC-Q101
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]350 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 618$ 1.09

Description

General part information

BST39 Series

NPN high-voltage transistor in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package.