Discrete Semiconductor Products

IPP03N03LA

Obsolete

MOSFET N-CH 25V 80A TO220-3

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 25V 80A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPP03N03LA

Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	57 nC
Input Capacitance (Ciss) (Max) @ Vds	7027 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	150 W
Rds On (Max) @ Id, Vgs	3 mOhm
Supplier Device Package	PG-TO220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

Part	Mounting Type	Vgs(th) (Max) @ Id	Operating Temperature [Max]	Operating Temperature [Min]	FET Type	Package / Case	Vgs (Max)	Technology	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]
INFINEON IPP03N03LA	Through Hole	2 V	175 °C	-55 °C	N-Channel	TO-220-3	20 V	MOSFET (Metal Oxide)	25 V	4.5 V 10 V	57 nC	PG-TO220-3	150 W	7027 pF	3 mOhm
INFINEON IPP03N03LB G	Through Hole	2 V	175 °C	-55 °C	N-Channel	TO-220-3	20 V	MOSFET (Metal Oxide)	30 V	4.5 V 10 V	59 nC	PG-TO220-3-1	150 W		3.1 mOhm	7624 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

N-Channel 25 V 80A (Tc) 150W (Tc) Through Hole PG-TO220-3

Technical documentation and resources