
HMC407MS8GE
LTBGAAS INGAP HBT MMIC POWER AMPLIFIER, 5 - 7 GHZ
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HMC407MS8GE
LTBGAAS INGAP HBT MMIC POWER AMPLIFIER, 5 - 7 GHZ
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Technical Specifications
Parameters and characteristics for this part
| Specification | HMC407MS8GE |
|---|---|
| Current - Supply | 230 mA |
| Frequency [Max] | 7 GHz |
| Frequency [Min] | 5 GHz |
| Gain | 15 dB |
| Mounting Type | Surface Mount |
| Noise Figure | 5.5 dB |
| P1dB | 25 dBm |
| Package / Case | 3 mm, 0.118 in |
| Package / Case | Exposed Pad, 8-MSOP, 8-TSSOP |
| RF Type | General Purpose |
| Supplier Device Package | 8-MSOP-EP |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
HMC407 Series
The HMC407MS8G & HMC407MS8GE are high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifiers which operate between 5 and 7 GHz. The amplifier requires no external matching to achieve operation and is thus truly 50 Ohm matched at input and output. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. The amplifier provides 15 dB of gain, +29 dBm of saturated power at 28% PAE from a +5V supply voltage. Power down capability is available to conserve current consumption when the amplifier is not in use.ApplicationsUNIIHiperLAN
Documents
Technical documentation and resources