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HMC407MS8GE
RF and Wireless

HMC407MS8GE

LTB
Analog Devices Inc./Maxim Integrated

GAAS INGAP HBT MMIC POWER AMPLIFIER, 5 - 7 GHZ

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HMC407MS8GE
RF and Wireless

HMC407MS8GE

LTB
Analog Devices Inc./Maxim Integrated

GAAS INGAP HBT MMIC POWER AMPLIFIER, 5 - 7 GHZ

Technical Specifications

Parameters and characteristics for this part

SpecificationHMC407MS8GE
Current - Supply230 mA
Frequency [Max]7 GHz
Frequency [Min]5 GHz
Gain15 dB
Mounting TypeSurface Mount
Noise Figure5.5 dB
P1dB25 dBm
Package / Case3 mm, 0.118 in
Package / CaseExposed Pad, 8-MSOP, 8-TSSOP
RF TypeGeneral Purpose
Supplier Device Package8-MSOP-EP

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyStrip 1$ 18.42<3d
10$ 16.04
25$ 15.22
100$ 14.09
250$ 13.41
500$ 12.94
MouserN/A 1$ 21.251m+
10$ 17.19
25$ 15.90
100$ 14.18
250$ 13.28
500$ 12.68

Description

General part information

HMC407 Series

The HMC407MS8G & HMC407MS8GE are high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifiers which operate between 5 and 7 GHz. The amplifier requires no external matching to achieve operation and is thus truly 50 Ohm matched at input and output. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. The amplifier provides 15 dB of gain, +29 dBm of saturated power at 28% PAE from a +5V supply voltage. Power down capability is available to conserve current consumption when the amplifier is not in use.ApplicationsUNIIHiperLAN