Discrete Semiconductor Products

KSE3055T

Obsolete

TRANS NPN 60V 10A TO220-3

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

TRANS NPN 60V 10A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	KSE3055T

DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	20
Frequency - Transition	2 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power - Max [Max]	600 mW
Supplier Device Package	TO-220-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	8 V
Voltage - Collector Emitter Breakdown (Max)	60 V

Part	Voltage - Collector Emitter Breakdown (Max)	Package / Case	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Transistor Type	Frequency - Transition	Power - Max [Max]	Operating Temperature	Vce Saturation (Max) @ Ib, Ic
ON Semiconductor KSE3055T	60 V	TO-220-3	TO-220-3	20	Through Hole	NPN	2 MHz	600 mW	150 °C	8 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor NPN 60 V 10 A 2MHz 600 mW Through Hole TO-220-3

Technical documentation and resources