Discrete Semiconductor Products

MPSA92 TIN/LEAD

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BIPOLAR TRANSISTORS - BJT PNP 300VCBO 300VCEO 5.0VEBO 500MA 625MW

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Discrete Semiconductor Products

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BIPOLAR TRANSISTORS - BJT PNP 300VCBO 300VCEO 5.0VEBO 500MA 625MW

Technical Specifications

Parameters and characteristics for this part

Specification	MPSA92 TIN/LEAD

Current - Collector Cutoff (Max) [Max]	250 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	25
Frequency - Transition	50 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-226AA
Package / Case	TO-92-3, TO-226-3
Power - Max [Max]	625 mW
Supplier Device Package	TO-92-3
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max) [Max]	300 V

Part	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Package / Case	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type	Frequency - Transition	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]
Central Semiconductor Corp MPSA92 TIN/LEAD	150 °C	-65 °C	TO-226AA	TO-226-3 TO-92-3	250 nA	TO-92-3	Through Hole	25	PNP	50 MHz	625 mW	300 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.17
Mouser	N/A	5000	$ 0.17
		10000	$ 0.16

General part information

BIPOLAR TRANSISTORS - BJT PNP 300VCBO 300VCEO 5.0VEBO 500MA 625MW

Technical documentation and resources

No documents available