Discrete Semiconductor Products

2SA1943N(S1,E,S)

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BIPOLAR (BJT) SINGLE TRANSISTOR, PNP, 230 V, 15 A, 150 W, TO-3P, THROUGH HOLE

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Discrete Semiconductor Products

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BIPOLAR (BJT) SINGLE TRANSISTOR, PNP, 230 V, 15 A, 150 W, TO-3P, THROUGH HOLE

Technical Specifications

Parameters and characteristics for this part

Specification	2SA1943N(S1,E,S)

Current - Collector (Ic) (Max) [Max]	15 A
Current - Collector Cutoff (Max) [Max]	5 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	80
Frequency - Transition	30 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	SC-65-3, TO-3P-3
Power - Max [Max]	150 W
Supplier Device Package	TO-3P(N)
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	3 V
Voltage - Collector Emitter Breakdown (Max) [Max]	230 V

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Frequency - Transition	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Transistor Type	Mounting Type	Supplier Device Package	Power - Max [Max]	Package / Case	Current - Collector (Ic) (Max) [Max]	Operating Temperature	Voltage - Collector Emitter Breakdown (Max) [Max]
Toshiba Semiconductor and Storage 2SA1943N(S1,E,S)	80	30 MHz	5 µA	3 V	PNP	Through Hole	TO-3P(N)	150 W	SC-65-3 TO-3P-3	15 A	150 °C	230 V

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General part information

BIPOLAR (BJT) SINGLE TRANSISTOR, PNP, 230 V, 15 A, 150 W, TO-3P, THROUGH HOLE

Technical documentation and resources