Integrated Circuits (ICs)

MR4A16BYS35

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MRAM 16MB 3.3V 35NS 1MX16 PARALLEL MRAM

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Integrated Circuits (ICs)

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MRAM 16MB 3.3V 35NS 1MX16 PARALLEL MRAM

Technical Specifications

Parameters and characteristics for this part

Specification	MR4A16BYS35

Access Time	35 ns
Memory Format	RAM
Memory Interface	Parallel
Memory Organization	1 M
Memory Size	2 MB
Memory Type	Non-Volatile
Mounting Type	Surface Mount
Operating Temperature [Max]	70 °C
Operating Temperature [Min]	0 °C
Supplier Device Package	54-TSOP2
Technology	MRAM (Magnetoresistive RAM)
Voltage - Supply [Max]	3.6 V
Voltage - Supply [Min]	3 V
Write Cycle Time - Word, Page [custom]	35 ns
Write Cycle Time - Word, Page [custom]	35 ns

Part	Voltage - Supply [Max]	Voltage - Supply [Min]	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Technology	Package / Case	Supplier Device Package	Memory Interface	Memory Format	Memory Size	Memory Type	Memory Organization	Write Cycle Time - Word, Page [custom]	Write Cycle Time - Word, Page [custom]	Access Time
Everspin Technologies Inc. MR4A16BCMA35R	3.6 V	3 V	85 C	-40 ¯C	Surface Mount	MRAM (Magnetoresistive RAM)	48-LFBGA	48-FBGA (10x10)	Parallel	RAM	2 MB	Non-Volatile	1 M	35 ns	35 ns	35 ns
Everspin Technologies Inc. MR4A16BYS35R	3.6 V	3 V	70 °C	0 °C	Surface Mount	MRAM (Magnetoresistive RAM)		54-TSOP2	Parallel	RAM	2 MB	Non-Volatile	1 M	35 ns	35 ns	35 ns
Everspin Technologies Inc. MR4A16BYS35	3.6 V	3 V	70 °C	0 °C	Surface Mount	MRAM (Magnetoresistive RAM)		54-TSOP2	Parallel	RAM	2 MB	Non-Volatile	1 M	35 ns	35 ns	35 ns
Everspin Technologies Inc. MR4A16BMA35	3.6 V	3 V	70 °C	0 °C	Surface Mount	MRAM (Magnetoresistive RAM)	48-LFBGA	48-FBGA (10x10)	Parallel	RAM	2 MB	Non-Volatile	1 M	35 ns	35 ns	35 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

MRAM 16MB 3.3V 35NS 1MX16 PARALLEL MRAM

Technical documentation and resources