Discrete Semiconductor Products

2N5963 TIN/LEAD

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BIPOLAR TRANSISTORS - BJT NPN 30VCBO 30VCEO 7.0VEBO 50MA 625MW

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Discrete Semiconductor Products

Active

BIPOLAR TRANSISTORS - BJT NPN 30VCBO 30VCEO 7.0VEBO 50MA 625MW

Technical Specifications

Parameters and characteristics for this part

Specification	2N5963 TIN/LEAD

Current - Collector (Ic) (Max) [Max]	50 mA
Current - Collector Cutoff (Max) [Max]	2 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	1200
Frequency - Transition	150 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-226AA
Package / Case	TO-92-3, TO-226-3
Power - Max [Max]	1.5 W
Supplier Device Package	TO-92-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	200 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	30 V

Part	Package / Case	Package / Case	Current - Collector Cutoff (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Operating Temperature [Max]	Operating Temperature [Min]	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Mounting Type	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type
Central Semiconductor Corp 2N5963 TIN/LEAD	TO-226AA	TO-226-3 TO-92-3	2 nA	50 mA	200 mV	150 °C	-65 °C	1.5 W	30 V	TO-92-3	Through Hole	150 MHz	1200	NPN

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.15
Mouser	N/A	5000	$ 0.15
		10000	$ 0.14

General part information

BIPOLAR TRANSISTORS - BJT NPN 30VCBO 30VCEO 7.0VEBO 50MA 625MW

Technical documentation and resources

No documents available