Discrete Semiconductor Products

SSM6K407TU,LF

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HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, N-CH MOSFET, 60 V, 2.0 A, 0.3 Ω@10V, SOT-363F(UF6)

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Discrete Semiconductor Products

Active

HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, N-CH MOSFET, 60 V, 2.0 A, 0.3 Ω@10V, SOT-363F(UF6)

Technical Specifications

Parameters and characteristics for this part

Specification	SSM6K407TU,LF

Current - Continuous Drain (Id) @ 25°C	2 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	6 nC
Input Capacitance (Ciss) (Max) @ Vds	150 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-SMD, Flat Leads
Power Dissipation (Max)	500 mW
Rds On (Max) @ Id, Vgs	300 mOhm
Supplier Device Package	UF6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 60 V, 2.0 A, 0.3 Ω@10V, SOT-363F(UF6)

Part	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Vgs (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Technology	Mounting Type	FET Type	Package / Case
Toshiba Semiconductor and Storage SSM6K407TU,LF	4 V	10 V	500 mW	150 pF	150 °C	2 V	6 nC	300 mOhm	20 V	60 V	2 A	UF6	MOSFET (Metal Oxide)	Surface Mount	N-Channel	6-SMD Flat Leads

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	790	$ 0.61

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 60 V, 2.0 A, 0.3 Ω@10V, SOT-363F(UF6)

Technical documentation and resources