Discrete Semiconductor Products

SUP50N10-21P-GE3

Obsolete

MOSFET N-CH 100V 50A TO220AB

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 100V 50A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	SUP50N10-21P-GE3

Current - Continuous Drain (Id) (Tc)	50 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On)	6 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	68 nC
Input Capacitance (Ciss) (Max)	2055 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-220-3
Package Name	TO-220AB
Power Dissipation (Max)	125 W, 3.1 W
Rds On (Max)	21 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

Part	Operating Temperature (Min)	Operating Temperature (Max)	Vgs (Max)	Mounting Type	Rds On (Max)	Gate Charge (Max)	FET Type	Current - Continuous Drain (Id) (Tc)	Vgs(th) (Max)	Package Name	Input Capacitance (Ciss) (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Power Dissipation (Max)	Package / Case	Technology	Drain to Source Voltage (Vdss)
Vishay Dale SUP50N03-5M1P-GE3	-55 °C	150 °C	20 V	Through Hole	5.1 mOhm	66 nC 66 nC	N-Channel	50 A	2.5 V	TO-220AB	2780 pF	10 V	4.5 V	2.7 W 59.5 W	TO-220-3	MOSFET (Metal Oxide)	30 V
Vishay Dale SUP50N10-21P-GE3	-55 °C	150 °C	20 V	Through Hole	21 mOhm	68 nC	N-Channel	50 A	4 V	TO-220AB	2055 pF	10 V	6 V	3.1 W 125 W	TO-220-3	MOSFET (Metal Oxide)	100 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

N-Channel 100 V 50A (Tc) 3.1W (Ta), 125W (Tc) Through Hole TO-220AB

Technical documentation and resources