Discrete Semiconductor Products

MIW50N65H-BP

Obsolete

IGBT TRENCH FS 650V 80A TO-247-3

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Discrete Semiconductor Products

Obsolete

IGBT TRENCH FS 650V 80A TO-247-3

Technical Specifications

Parameters and characteristics for this part

Specification	MIW50N65H-BP

Current - Collector (Ic) (Max) [Max]	80 A
Current - Collector Pulsed (Icm)	200 A
Gate Charge	186 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	250 W
Reverse Recovery Time (trr)	88 ns
Supplier Device Package	TO-247-3
Switching Energy	1.34 mJ, 1.59 mJ
Td (on/off) @ 25°C [custom]	69 ns
Td (on/off) @ 25°C [custom]	404 ns
Test Condition	10 Ohm, 50 A, 15 V, 400 V
Vce(on) (Max) @ Vge, Ic	1.9 V
Voltage - Collector Emitter Breakdown (Max) [Max]	650 V

Part	Mounting Type	Power - Max [Max]	Package / Case	Test Condition	Gate Charge	Vce(on) (Max) @ Vge, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	Reverse Recovery Time (trr)	Td (on/off) @ 25°C [custom]	Td (on/off) @ 25°C [custom]	Switching Energy	IGBT Type	Current - Collector Pulsed (Icm)	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Current - Collector (Ic) (Max) [Max]
MCC (Micro Commercial Components) MIW50N65H-BP	Through Hole	250 W	TO-247-3	10 Ohm 15 V 50 A 400 V	186 nC	1.9 V	650 V	88 ns	69 ns	404 ns	1.34 mJ 1.59 mJ	Trench Field Stop	200 A	175 °C	-55 °C	TO-247-3	80 A
MCC (Micro Commercial Components) MIW50N65H-BP	Through Hole	250 W	TO-247-3	10 Ohm 15 V 50 A 400 V	186 nC	1.9 V	650 V	88 ns	69 ns	404 ns	1.34 mJ 1.59 mJ	Trench Field Stop	200 A	175 °C	-55 °C	TO-247-3	80 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

IGBT Trench Field Stop 650 V 80 A 250 W Through Hole TO-247-3

Technical documentation and resources