BUK7M22-80EX

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MOSFET N-CH 80V 37A LFPAK33

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Discrete Semiconductor Products

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MOSFET N-CH 80V 37A LFPAK33

Technical Specifications

Parameters and characteristics for this part

Specification	BUK7M22-80EX

Current - Continuous Drain (Id) @ 25°C	37 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	23.9 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1643 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Power Dissipation (Max)	75 W
Qualification	AEC-Q101
Supplier Device Package	LFPAK33
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Qualification	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Grade	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Technology	Mounting Type	Current - Continuous Drain (Id) @ 25°C	FET Type
Freescale Semiconductor - NXP BUK7M22-80EX	-55 °C	175 ░C	75 W	AEC-Q101	LFPAK33	23.9 nC	10 V	Automotive	80 V	1643 pF	20 V	MOSFET (Metal Oxide)	Surface Mount	37 A	N-Channel

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General part information

N-Channel 80 V 37A (Tc) 75W (Tc) Surface Mount LFPAK33

Technical documentation and resources