Zenode.ai Logo
Beta
TO-220AB PKG
Discrete Semiconductor Products

IRFB52N15DPBF

Active
INFINEON

IR MOSFET™ N-CHANNEL ; TO-220 PACKAGE; 32 MOHM;

Deep-Dive with AI

Search across all available documentation for this part.

TO-220AB PKG
Discrete Semiconductor Products

IRFB52N15DPBF

Active
INFINEON

IR MOSFET™ N-CHANNEL ; TO-220 PACKAGE; 32 MOHM;

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIRFB52N15DPBF
Current - Continuous Drain (Id) @ 25°C51 A
Drain to Source Voltage (Vdss)150 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs89 nC
Input Capacitance (Ciss) (Max) @ Vds2770 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max)3.8 W, 230 W
Rds On (Max) @ Id, Vgs32 mOhm
Supplier Device PackageTO-220AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 9421$ 2.68
Tube 1$ 3.77
10$ 2.47
100$ 1.73
500$ 1.42
1000$ 1.32
2000$ 1.29

Description

General part information

IRFB52 Series

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Documents

Technical documentation and resources