Discrete Semiconductor Products
RQ6C050UNTR
ActiveRohm Semiconductor
MOSFET, N-CH, 20V, 5A, 150DEG C, 1.25W
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Discrete Semiconductor Products
RQ6C050UNTR
ActiveRohm Semiconductor
MOSFET, N-CH, 20V, 5A, 150DEG C, 1.25W
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | RQ6C050UNTR |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 5 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 12 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 900 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Power Dissipation (Max) [Max] | 1.25 W |
| Rds On (Max) @ Id, Vgs | 30 mOhm |
| Supplier Device Package | TSMT6 (SC-95) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 10 V |
| Vgs(th) (Max) @ Id | 1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
RQ6C050 Series
Small surface mount package RQ6C050UN is suitable for Switching applications.
Documents
Technical documentation and resources
