
HMC1022A-SX
ActiveGAAS, PHEMT, MMIC, 0.25 W POWER AMPLIFIER, DC TO 48 GHZ
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HMC1022A-SX
ActiveGAAS, PHEMT, MMIC, 0.25 W POWER AMPLIFIER, DC TO 48 GHZ
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Technical Specifications
Parameters and characteristics for this part
| Specification | HMC1022A-SX |
|---|---|
| Current - Supply | 150 mA |
| Frequency [Max] | 48 GHz |
| Frequency [Min] | 0 Hz |
| Gain | 11.5 dBd |
| Mounting Type | Surface Mount |
| Noise Figure | 7 dB |
| P1dB | 17 dBm |
| Package / Case | Die |
| RF Type | General Purpose |
| Supplier Device Package | Die |
| Test Frequency [Max] | 48 GHz |
| Test Frequency [Min] | 40 GHz |
| Voltage - Supply | 10 VDC |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | Updated |
|---|---|---|---|---|
| Digikey | Tray | 2 | $ 917.03 | <2d |
| 4 | $ 886.42 | |||
| 6 | $ 869.37 | |||
| 10 | $ 848.73 | |||
Description
General part information
HMC1022A-Die Series
The HMC1022ACHIPS is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), distributed power amplifier that operates from dc to 48 GHz. The amplifier provides 11.5 dB of small signal gain, 0.25 W (25 dBm) output power at 1 dB gain compression (P1dB), and a typical output third-order intercept (IP3) of 33 dBm, while requiring 150 mA from a 10 V supply on the VDDpin. Gain flatness is excellent from dc to 48 GHz at ±0.5 dB typical, making the HMC1022ACHIPS ideal for military, space, and test equipment applications. The HMC1022ACHIPS also features inputs/outputs (I/Os) that are internally matched to 50 Ω, facilitating integration into multichip modules (MCMs). All data is taken with the chip connected via 0.075 mm × 0.025 mm (3 mil × 1 mil) ribbon bonds with a minimal length of 0.31 mm (12 mils).ApplicationsMilitary and spaceTest instrumentation
Documents
Technical documentation and resources