Discrete Semiconductor Products

IPB60R040CFD7ATMA1

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MOSFET, N-CH, 600V, 50A, 150DEG C, 227W ROHS COMPLIANT: YES

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Discrete Semiconductor Products

Active

MOSFET, N-CH, 600V, 50A, 150DEG C, 227W ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	IPB60R040CFD7ATMA1

Current - Continuous Drain (Id) @ 25°C	50 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	108 nC
Input Capacitance (Ciss) (Max) @ Vds	4351 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	227 W
Rds On (Max) @ Id, Vgs	40 mOhm
Supplier Device Package	PG-TO263-3-2
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

Part	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Mounting Type	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	FET Type	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]
INFINEON IPB60R040CFD7ATMA1	20 V	4351 pF	10 V	PG-TO263-3-2	50 A	600 V	150 °C	-55 °C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	40 mOhm	227 W	108 nC	MOSFET (Metal Oxide)	N-Channel	4.5 V
INFINEON IPB60R040C7ATMA1	20 V		10 V		50 A	600 V	150 °C	-55 °C	D2PAK (3 Leads + Tab) TO-263-4 TO-263AA	Surface Mount	40 mOhm	227 W		MOSFET (Metal Oxide)	N-Channel	4 V	107 nC	4340 pF

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General part information

N-Channel 600 V 50A (Tc) 227W (Tc) Surface Mount PG-TO263-3-2

Technical documentation and resources