Specification	SSM3J352F,LF

Current - Continuous Drain (Id) @ 25°C	2 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 1.8 V
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]	210 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	1.2 W
Rds On (Max) @ Id, Vgs	110 mOhm
Supplier Device Package	S-Mini
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.2 V

SSM3J352F Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -20 V, -2.0 A, 0.11 Ω@10V, SOT-346(S-Mini)

Part	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Operating Temperature	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Technology	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Package / Case	FET Type
Toshiba Semiconductor and Storage SSM3J352F,LF	2 A	Surface Mount	150 °C	1.8 V 10 V	12 V	MOSFET (Metal Oxide)	S-Mini	210 pF	1.2 V	1.2 W	20 V	110 mOhm	SC-59 SOT-23-3 TO-236-3	P-Channel

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	3059	$ 0.39

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -20 V, -2.0 A, 0.11 Ω@10V, SOT-346(S-Mini)

Technical documentation and resources