Specification	CSD19506KTTT

Current - Continuous Drain (Id) @ 25°C	200 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	156 nC
Input Capacitance (Ciss) (Max) @ Vds	12200 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-263AA, D2PAK (3 Leads + Tab), TO-263-4
Power Dissipation (Max) [Max]	375 W
Rds On (Max) @ Id, Vgs	2.3 mOhm
Supplier Device Package	TO-263 (DDPAK-3)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.2 V

CSD19506KCS Series

80-V, N channel NexFET™ power MOSFET, single TO-220, 2.3 mOhm

Part	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Supplier Device Package	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Technology	Current - Continuous Drain (Id) @ 25°C	Mounting Type
Texas Instruments CSD19506KTTT	20 V	12200 pF	80 V	-55 °C	175 ░C	D2PAK (3 Leads + Tab) TO-263-4 TO-263AA	2.3 mOhm	3.2 V	375 W	TO-263 (DDPAK-3)	N-Channel	156 nC	6 V 10 V	MOSFET (Metal Oxide)	200 A	Surface Mount
Texas Instruments CSD19506KCS	20 V	12200 pF	80 V	-55 °C	175 ░C	TO-220-3	2.3 mOhm	3.2 V	375 W	TO-220-3	N-Channel	156 nC	6 V 10 V	MOSFET (Metal Oxide)	100 A	Through Hole
Texas Instruments CSD19506KTT	20 V	12200 pF	80 V	-55 °C	175 ░C	D2PAK (3 Leads + Tab) TO-263-4 TO-263AA	2.3 mOhm	3.2 V	375 W	TO-263 (DDPAK-3)	N-Channel	156 nC	6 V 10 V	MOSFET (Metal Oxide)	200 A	Surface Mount

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This 80-V, 2.0-mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

Technical documentation and resources