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SOT89
Discrete Semiconductor Products

BCX52TF

Active
Nexperia USA Inc.

BIPOLAR TRANSISTORS - BJT 80 V, 1 A PNP MEDIUM POWER TRANSISTORS

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SOT89
Discrete Semiconductor Products

BCX52TF

Active
Nexperia USA Inc.

BIPOLAR TRANSISTORS - BJT 80 V, 1 A PNP MEDIUM POWER TRANSISTORS

Technical Specifications

Parameters and characteristics for this part

SpecificationBCX52TF
Current - Collector (Ic) (Max) [Max]1 A
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]63
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseTO-243AA
Power - Max [Max]500 mW
QualificationAEC-Q101
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]60 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 6470$ 0.53
MouserN/A 1$ 0.42
10$ 0.25
100$ 0.12
1000$ 0.09
4000$ 0.08
8000$ 0.06
48000$ 0.06
100000$ 0.06

Description

General part information

BCX52T Series

PNP power transistors in a power SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package.