Discrete Semiconductor Products
IPP126N10N3GXKSA1
ObsoleteINFINEON
OPTIMOS™ 3 N-CHANNEL POWER MOSFET 100 V ; TO-220 PACKAGE; 12.6 MOHM;
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Discrete Semiconductor Products
IPP126N10N3GXKSA1
ObsoleteINFINEON
OPTIMOS™ 3 N-CHANNEL POWER MOSFET 100 V ; TO-220 PACKAGE; 12.6 MOHM;
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IPP126N10N3GXKSA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 58 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 6 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 35 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 2500 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 94 W |
| Rds On (Max) @ Id, Vgs | 12.3 mOhm |
| Supplier Device Package | PG-TO220-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id [Max] | 3.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 0.85 | |
Description
General part information
IPP126 Series
Infineon's 100 V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS(on)and FOM (figure of merit).
Documents
Technical documentation and resources