Specification	NVB6412ANT4G

Current - Continuous Drain (Id) @ 25°C	58 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	100 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	3500 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	167 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	18.2 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

NVB6410AN Series

Power MOSFET 100V, 58A, 18.2 mohm, Single N-Channel, D2PAK.

Part	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Qualification	Supplier Device Package	Mounting Type	Technology	Vgs (Max)	Package / Case	Rds On (Max) @ Id, Vgs	Grade	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	FET Type	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor NVB6412ANT4G	-55 °C	175 ░C	4 V	10 V	100 nC	167 W	AEC-Q101	D2PAK	Surface Mount	MOSFET (Metal Oxide)	20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	18.2 mOhm	Automotive	100 V	58 A	N-Channel	3500 pF
ON Semiconductor NVB6413ANT4G	-55 °C	175 ░C	4 V	10 V	51 nC	136 W	AEC-Q101	D2PAK	Surface Mount	MOSFET (Metal Oxide)	20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	28 mOhm	Automotive	100 V	42 A	N-Channel	1800 pF
ON Semiconductor NVB6410ANT4G	-55 °C	175 ░C	4 V	10 V	120 nC	188 W	AEC-Q101	D2PAK	Surface Mount	MOSFET (Metal Oxide)	20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	13 mOhm	Automotive	100 V	76 A	N-Channel	4500 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

NVB6410AN Series

Automotive Power MOSFET. 100V, 58A, 18.2 mohm, Single N-Channel, D2PAK. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.