Specification	XPH3R206NC,L1XHQ

Current - Continuous Drain (Id) @ 25°C	70 A
Drain to Source Voltage (Vdss)	60 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	65 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	4180 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	960 mW
Power Dissipation (Max)	132 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	3.2 mOhm
Supplier Device Package	8-SOP Advance
Supplier Device Package [x]	5
Supplier Device Package [y]	5
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

XPH3R206NC Series

Part	Package / Case	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Qualification	Grade	Supplier Device Package [x]	Supplier Device Package	Supplier Device Package [y]	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Technology	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Mounting Type	Power Dissipation (Max)	Power Dissipation (Max)
Toshiba Semiconductor and Storage XPH3R206NC,L1XHQ	8-PowerVDFN	60 V	2.5 V	AEC-Q101	Automotive	5	8-SOP Advance	5	175 °C	65 nC	20 V	70 A	MOSFET (Metal Oxide)	N-Channel	4180 pF	3.2 mOhm	Surface Mount	960 mW	132 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 60 V 70A (Ta) 960mW (Ta), 132W (Tc) Surface Mount 8-SOP Advance (5x5)

Technical documentation and resources