Discrete Semiconductor Products
BSS8402DW-7-F
ActiveDiodes Inc
SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.115A I(D), 60V, 2-ELEMENT, N-CHANNEL AND P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, GREEN, PLASTIC PACKAGE-6
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Discrete Semiconductor Products
BSS8402DW-7-F
ActiveDiodes Inc
SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.115A I(D), 60V, 2-ELEMENT, N-CHANNEL AND P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, GREEN, PLASTIC PACKAGE-6
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Technical Specifications
Parameters and characteristics for this part
| Specification | BSS8402DW-7-F |
|---|---|
| Configuration | N and P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 115 mA, 130 mA |
| Drain to Source Voltage (Vdss) | 50 V, 60 V |
| FET Feature | Logic Level Gate |
| Input Capacitance (Ciss) (Max) @ Vds | 50 pF, 45 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Power - Max [Max] | 200 mW |
| Rds On (Max) @ Id, Vgs | 7.5 Ohm |
| Supplier Device Package | SOT-363 |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
BSS8402DW Series
Complementary Pair Enhancement Mode MOSFET
Documents
Technical documentation and resources