Discrete Semiconductor Products

RF1601T2D

NRND

DIODE ARRAY GP 200V 8A TO-220FN

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Discrete Semiconductor Products

NRND

DIODE ARRAY GP 200V 8A TO-220FN

Technical Specifications

Parameters and characteristics for this part

Specification	RF1601T2D

Current - Average Rectified (Io) (per Diode)	8 A
Current - Reverse Leakage @ Vr	10 ÁA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Package / Case	TO-220-3 Full Pack
Reverse Recovery Time (trr)	30 ns
Speed	500 ns, 200 mA
Supplier Device Package	TO-220FN
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	930 mV

Part	Technology	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Diode Configuration	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Mounting Type	Reverse Recovery Time (trr)	Current - Average Rectified (Io) (per Diode)	Speed	Voltage - Forward (Vf) (Max) @ If
Rohm Semiconductor RF1601T2D	Standard	10 ÁA	150 °C	1 Pair Common Cathode	TO-220FN	200 V	TO-220-3 Full Pack	Through Hole	30 ns	8 A	200 mA 500 ns	930 mV

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General part information

DIODE ARRAY GP 200V 8A TO-220FN

Technical documentation and resources

No documents available