Discrete Semiconductor Products
PBSS4260QAZ
ActiveNexperia USA Inc.
60 V, 2 A NPN LOW VCESAT (BISS) TRANSISTOR
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Discrete Semiconductor Products
PBSS4260QAZ
ActiveNexperia USA Inc.
60 V, 2 A NPN LOW VCESAT (BISS) TRANSISTOR
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | PBSS4260QAZ |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 2 A |
| Current - Collector Cutoff (Max) [Max] | 100 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 40 |
| Frequency - Transition | 180 MHz |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | 3-XDFN Exposed Pad |
| Power - Max [Max] | 325 mW |
| Qualification | AEC-Q100 |
| Supplier Device Package | DFN1010D-3 |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 190 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 60 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 0.61 | |
| 305000 | $ 0.22 | |||
Description
General part information
PBSS4260QA Series
NPN low VCEsatBreakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.
Documents
Technical documentation and resources