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SIF912EDZ-T1-E3
Discrete Semiconductor Products

SIF912EDZ-T1-E3

Obsolete
Vishay Dale

MOSFET 2N-CH 30V 7.4A PPAK

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SIF912EDZ-T1-E3
Discrete Semiconductor Products

SIF912EDZ-T1-E3

Obsolete
Vishay Dale

MOSFET 2N-CH 30V 7.4A PPAK

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSIF912EDZ-T1-E3
Channel Count2
ConfigurationN-Channel (Dual) Common Drain
Current - Continuous Drain (Id)7.4 A
Drain to Source Voltage (Vdss)30 V
FET FeatureLogic Level Gate
Gate Charge (Max)15 nC
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CasePowerPAK® 2x5
Package Length2 mm
Package NamePowerPAK®
Package Width5 mm
Power - Max1.6 W
Rds On (Max)19 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max)1.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyN/A 0$ 0.511m+

CAD

3D models and CAD resources for this part

Description

General part information

SIF912 Series

Mosfet Array 30V 7.4A 1.6W Surface Mount PowerPAK® (2x5)

Documents

Technical documentation and resources

No documents available