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MJD2873-QJ
Discrete Semiconductor Products

MJD2873-QJ

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Nexperia USA Inc.

TRANSISTOR GP BJT NPN 50V 2A 3-PIN DPAK T/R

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MJD2873-QJ
Discrete Semiconductor Products

MJD2873-QJ

Active
Nexperia USA Inc.

TRANSISTOR GP BJT NPN 50V 2A 3-PIN DPAK T/R

Technical Specifications

Parameters and characteristics for this part

SpecificationMJD2873-QJ
Current - Collector (Ic) (Max) [Max]2 A
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]120
Frequency - Transition65 MHz
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseTO-252-3, SC-63, DPAK (2 Leads + Tab)
Power - Max [Max]1.6 W
QualificationAEC-Q100
Supplier Device PackageDPAK
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]50 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 9340$ 0.85

Description

General part information

MJD2873-Q Series

NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package.