Discrete Semiconductor Products

IV2Q06025T4Z

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GEN 2, SIC MOSFET, 650V 25MOHM,

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Discrete Semiconductor Products

Active

GEN 2, SIC MOSFET, 650V 25MOHM,

Technical Specifications

Parameters and characteristics for this part

Specification	IV2Q06025T4Z

Current - Continuous Drain (Id) @ 25°C	99 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	18 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	125 nC
Input Capacitance (Ciss) (Max) @ Vds	3090 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-4
Power Dissipation (Max)	454 W
Rds On (Max) @ Id, Vgs	33 mOhm
Supplier Device Package	TO-247-4
Vgs (Max) [Max]	20 V, -5 V
Vgs(th) (Max) @ Id	4.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	60	$ 12.48

General part information

GEN 2, SIC MOSFET, 650V 25MOHM,

Technical documentation and resources