Discrete Semiconductor Products

SI2101A-TP

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P-CHANNEL MOSFET

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Discrete Semiconductor Products

Active

P-CHANNEL MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	SI2101A-TP

Current - Continuous Drain (Id) @ 25°C	2 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	1.8 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	3.9 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	290 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-323, SC-70
Power Dissipation (Max) [Max]	450 mW
Rds On (Max) @ Id, Vgs	130 mOhm
Supplier Device Package	SOT-323
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	1 V

Part	FET Type	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Vgs (Max)	Technology	Package / Case	Mounting Type	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Power Dissipation (Max) [Max]
MCC (Micro Commercial Components) SI2101A-TP	P-Channel	2 A	290 pF	130 mOhm	3.9 nC	1 V	20 V	1.8 V	4.5 V	10 V	MOSFET (Metal Oxide)	SC-70 SOT-323	Surface Mount	SOT-323	150 °C	-55 °C	450 mW
MCC (Micro Commercial Components) SI2101A-TP	P-Channel	2 A	290 pF	130 mOhm	3.9 nC	1 V	20 V	1.8 V	4.5 V	10 V	MOSFET (Metal Oxide)	SC-70 SOT-323	Surface Mount	SOT-323	150 °C	-55 °C	450 mW

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General part information

P-Channel 20 V 2A 450mW Surface Mount SOT-323

Technical documentation and resources