Discrete Semiconductor Products
PBSS4160DS,115
ActiveNexperia USA Inc.
TRANS GP BJT NPN 60V 1A 700MW 6-PIN TSOP T/R
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Search across all available documentation for this part.
Discrete Semiconductor Products
PBSS4160DS,115
ActiveNexperia USA Inc.
TRANS GP BJT NPN 60V 1A 700MW 6-PIN TSOP T/R
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | PBSS4160DS,115 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 1 A |
| Current - Collector Cutoff (Max) [Max] | 100 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 200 |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | SOT-457, SC-74 |
| Power - Max [Max] | 420 mW |
| Qualification | AEC-Q100 |
| Supplier Device Package | 6-TSOP |
| Transistor Type | 2 NPN (Dual) |
| Vce Saturation (Max) @ Ib, Ic | 250 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 60 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 3283 | $ 0.67 | |
Description
General part information
PBSS4160DS Series
NPN/NPN low VCEsattransistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.
Documents
Technical documentation and resources