
Discrete Semiconductor Products
BC856BMBYL
ActiveNexperia USA Inc.
BIPOLAR TRANSISTORS - BJT 60 V, 100 MA PNP GENERAL-PURPOSE TRANSISTOR
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Search across all available documentation for this part.

Discrete Semiconductor Products
BC856BMBYL
ActiveNexperia USA Inc.
BIPOLAR TRANSISTORS - BJT 60 V, 100 MA PNP GENERAL-PURPOSE TRANSISTOR
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | BC856BMBYL |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 100 mA |
| Current - Collector Cutoff (Max) [Max] | 15 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 220 |
| Frequency - Transition | 100 MHz |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | 3-XFDFN |
| Power - Max [Max] | 250 mW |
| Qualification | AEC-Q101 |
| Supplier Device Package | DFN1006B-3 |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 200 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 60 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
BC856BMB Series
PNP general-purpose transistor in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.
Documents
Technical documentation and resources