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BC856BMBYL
Discrete Semiconductor Products

BC856BMBYL

Active
Nexperia USA Inc.

BIPOLAR TRANSISTORS - BJT 60 V, 100 MA PNP GENERAL-PURPOSE TRANSISTOR

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BC856BMBYL
Discrete Semiconductor Products

BC856BMBYL

Active
Nexperia USA Inc.

BIPOLAR TRANSISTORS - BJT 60 V, 100 MA PNP GENERAL-PURPOSE TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

SpecificationBC856BMBYL
Current - Collector (Ic) (Max) [Max]100 mA
Current - Collector Cutoff (Max) [Max]15 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]220
Frequency - Transition100 MHz
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / Case3-XFDFN
Power - Max [Max]250 mW
QualificationAEC-Q101
Supplier Device PackageDFN1006B-3
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic200 mV
Voltage - Collector Emitter Breakdown (Max) [Max]60 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 8703$ 0.26
MouserN/A 1$ 0.20
10$ 0.12
100$ 0.05
1000$ 0.04
2500$ 0.04
10000$ 0.03
20000$ 0.03
50000$ 0.02

Description

General part information

BC856BMB Series

PNP general-purpose transistor in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.