Specification	FDP33N25

Current - Continuous Drain (Id) @ 25°C	33 A
Drain to Source Voltage (Vdss)	250 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	48 nC
Input Capacitance (Ciss) (Max) @ Vds	2135 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	235 W
Rds On (Max) @ Id, Vgs	94 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

FDP33N25 Series

Power MOSFET, N-Channel, UniFETTM, 250 V, 33 A, 94 mΩ, TO-220

Part	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Vgs(th) (Max) @ Id	Vgs (Max)	Package / Case	Technology	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	FET Type	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Power Dissipation (Max) [Max]
ON Semiconductor FDP33N25	-55 °C	150 °C	Through Hole	5 V	30 V	TO-220-3	MOSFET (Metal Oxide)	250 V	48 nC	2135 pF	94 mOhm	N-Channel	33 A	10 V	TO-220-3	235 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 2.75
		10	$ 1.78
		100	$ 1.23
		500	$ 0.99
		1000	$ 0.91
		2000	$ 0.85
		5000	$ 0.84
ON Semiconductor	N/A	1	$ 0.90

Description

General part information

FDP33N25 Series

UniFETTMMOSFET is a high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.