Discrete Semiconductor Products

PMPB27EPAX

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MOSFET P-CH 30V 6.1A DFN2020MD-6

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Discrete Semiconductor Products

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MOSFET P-CH 30V 6.1A DFN2020MD-6

Technical Specifications

Parameters and characteristics for this part

Specification	PMPB27EPAX

Current - Continuous Drain (Id) @ 25°C	6.1 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	45 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1570 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-UDFN Exposed Pad
Power Dissipation (Max)	1.7 W, 12.5 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	29 mOhm
Supplier Device Package	DFN2020MD-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Grade	Technology	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Qualification	FET Type	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Vgs (Max)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Package / Case
Freescale Semiconductor - NXP PMPB27EPAX	45 nC	1.7 W 12.5 W	2.5 V	Automotive	MOSFET (Metal Oxide)	30 V	-55 °C	150 °C	AEC-Q101	P-Channel	6.1 A	4.5 V 10 V	Surface Mount	20 V	DFN2020MD-6	1570 pF	29 mOhm	6-UDFN Exposed Pad

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 30 V 6.1A (Ta) 1.7W (Ta), 12.5W (Tc) Surface Mount DFN2020MD-6

Technical documentation and resources